Atomically thin two-dimensional (2D) layered materials like semiconducting transition metal dichalcogenides (TMDs) represent the ultimate limit of miniaturization in the vertical direction, holding great potential for advanced nanoelectronics 1, 2. Aside from improving the device design, many efforts have also been made to explore new materials that can replace silicon for shorter FET channel implementations. This three-dimensional (3D) design enables control over the on/off states of FinFETs from both sides of the circuit, thereby offering better control due to more effective leakage current suppression. In FinFET, the transistor channel is constructed into a fin-like shape forming a wrap-around gate structure. For this reason, modified device structures, such as the fin field-effect transistors (FinFETs), were introduced. To continue to keep up with the miniaturization requirements, shortening the device channel is a traditional solution, although the challenge with this approach is the rise of leakage current due to short-channel effects. However, the imminent end of Moore’s Law has already been expected over the last few years. The recent trend in the development of electronic devices is directed toward miniaturization, portability, and high performance, well agreed with the prediction of Moore’s Law. This work clearly proves the integration compatibility of 2D materials with Si-based devices, encouraging the further development of monolithic 3D integrated circuits. The MoS 2 n-FETs and Si p-FinFETs display symmetrical transfer characteristics and the resulting 3D complementary metal-oxide-semiconductor inverter show a voltage transfer characteristic with a maximum gain of ~38. The 2D FET is fabricated using low-temperature sequential processes to avoid the degradation of lower-tier Si devices. The integration was enabled by deliberately adopting industrially matured techniques, such as chemical mechanical planarization and e-beam evaporation, to ensure its compatibility with the existing 3D integrated circuit process and the semiconductor industry in general. Here, we successfully integrated an n-type monolayer MoS 2 FET on a p-type Si fin-shaped FET with 20 nm fin width via an M3D integration technique to form a complementary inverter. The concept to integrate 2D material-based devices with Si field-effect transistor (FET) is technologically important but the compatibility is yet to be experimentally demonstrated. Two-dimensional (2D) materials such as MoS 2 are potential building blocks for constructing upper-tier transistors owing to their high mobility, atomic thickness, and back-end-of-line (BEOL) compatible processes. Monolithic three-dimensional (M3D) integration has been considered as a powerful scheme to further boost up the system performance. The performance enhancement of integrated circuits relying on dimension scaling (i.e., following Moore’s Law) is more and more challenging owing to the physical limit of Si materials.
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